SK Hynix: Yield of HBM Hybrid Bonding Process Improved
2026-04-30
SK Hynix has announced a significant yield improvement in its hybrid bonding process for High-Bandwidth Memory (HBM), according to the company’s technical leadership. During a recent semiconductor conference in Seoul, Mr. Jonghoon Kim, Technical Leader at SK Hynix, confirmed that the 12-layer HBM stack using hybrid bonding has completed full validation, with the team now focused on yield optimization for mass production readiness.
Compared to two years ago, the process maturity and yield rates have advanced substantially, though exact figures remain undisclosed. Hybrid bonding—an advanced bump-less packaging technology—enables direct copper-to-copper atomic bonding between memory dies, eliminating traditional micro-bump interconnects. This breakthrough delivers higher bandwidth, lower power consumption, reduced thermal generation, and a thinner stack profile, addressing key limitations of conventional TC-NCF and MR-MUF processes.
As the industry shifts toward HBM4 and beyond, hybrid bonding is poised to become the core technology for high-layer stacks (16+ layers), supporting the growing demands of AI, high-performance computing, and data center applications. By accelerating the commercialization of hybrid bonding, SK Hynix aims to strengthen its technological barriers, expand market leadership, and deliver more competitive, high-reliability HBM products and services to global customers.
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